1N8026-GA

GeneSiC Semiconductor 1N8026-GA

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  • 1N8026-GA
  • GeneSiC Semiconductor
  • DIODE SILICON 1.2KV 8A TO257
  • Diodes - Rectifiers - Single
  • 1N8026-GA Datasheet
  • TO-257-3
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3888
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
1N8026-GA
Category
Diodes - Rectifiers - Single
Manufacturer
GeneSiC Semiconductor
Description
DIODE SILICON 1.2KV 8A TO257
Package
Cut Tape (CT)
Series
-
Mounting Type
Through Hole
Package / Case
TO-257-3
Supplier Device Package
TO-257
Diode Type
Silicon Carbide Schottky
Current - Average Rectified (Io)
8A (DC)
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 2.5 A
Current - Reverse Leakage @ Vr
10 µA @ 1200 V
Capacitance @ Vr, F
237pF @ 1V, 1MHz
Voltage - DC Reverse (Vr) (Max)
1200 V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Operating Temperature - Junction
-55°C ~ 250°C
Package_case
TO-257-3

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