1N8035-GA

GeneSiC Semiconductor 1N8035-GA

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  • 1N8035-GA
  • GeneSiC Semiconductor
  • DIODE SCHOTTKY 650V 14.6A TO276
  • Diodes - Rectifiers - Single
  • 1N8035-GA Datasheet
  • TO-276AA
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4507
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
1N8035-GA
Category
Diodes - Rectifiers - Single
Manufacturer
GeneSiC Semiconductor
Description
DIODE SCHOTTKY 650V 14.6A TO276
Package
Tube
Series
-
Mounting Type
Surface Mount
Package / Case
TO-276AA
Supplier Device Package
TO-276
Diode Type
Silicon Carbide Schottky
Current - Average Rectified (Io)
14.6A (DC)
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 15 A
Current - Reverse Leakage @ Vr
5 µA @ 650 V
Capacitance @ Vr, F
1107pF @ 1V, 1MHz
Voltage - DC Reverse (Vr) (Max)
650 V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Operating Temperature - Junction
-55°C ~ 250°C
Package_case
TO-276AA

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