2003

Microsemi Corporation 2003

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  • 2003
  • Microsemi Corporation
  • RF TRANS NPN 50V 2GHZ 55BT-1
  • Transistors - Bipolar (BJT) - RF
  • 2003 Datasheet
  • 55BT-1
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1125
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
2003
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
Microsemi Corporation
Description
RF TRANS NPN 50V 2GHZ 55BT-1
Package
Bulk
Series
-
Operating Temperature
200°C (TJ)
Mounting Type
Chassis Mount
Package / Case
55BT-1
Supplier Device Package
55BT-1
Gain
8.5dB
Power - Max
12W
Transistor Type
NPN
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
50V
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 100mA, 5V
Frequency - Transition
2GHz
Noise Figure (dB Typ @ f)
-
Package_case
55BT-1

2003 Guarantees

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Microsemi Corporation
Microsemi Corporation
Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; ...
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