2N7000,126

NXP USA Inc. 2N7000,126

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  • 2N7000,126
  • NXP USA Inc.
  • MOSFET N-CH 60V 300MA TO92-3
  • Transistors - FETs, MOSFETs - Single
  • 2N7000,126 Datasheet
  • TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 24448
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
2N7000,126
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 60V 300MA TO92-3
Package
Tube
Series
TrenchMOS™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
830mW (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
300mA (Tc)
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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