NXP USA Inc. 2N7000,126
- 2N7000,126
- NXP USA Inc.
- MOSFET N-CH 60V 300MA TO92-3
- Transistors - FETs, MOSFETs - Single
- 2N7000,126 Datasheet
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Tube
-
Lead free / RoHS Compliant
- 24448
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number 2N7000,126 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer NXP USA Inc. |
Description MOSFET N-CH 60V 300MA TO92-3 |
Package Tube |
Series TrenchMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package TO-92-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 830mW (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 300mA (Tc) |
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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