2SA1371E-AE

Sanyo 2SA1371E-AE

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  • 2SA1371E-AE
  • Sanyo
  • PNP EPITAXIAL PLANAR SILICON
  • Transistors - Bipolar (BJT) - Single
  • 2SA1371E-AE Datasheet
  • TO-226-3, TO-92-3 Long Body
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2901
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
2SA1371E-AE
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Sanyo
Description
PNP EPITAXIAL PLANAR SILICON
Package
Bulk
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
3-MP
Power - Max
1 W
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
300 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 10V
Frequency - Transition
150MHz
Package_case
TO-226-3, TO-92-3 Long Body

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