2SA1382,T6MIBF(J

Toshiba Semiconductor and Storage 2SA1382,T6MIBF(J

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  • 2SA1382,T6MIBF(J
  • Toshiba Semiconductor and Storage
  • TRANS PNP 2A 50V TO226-3
  • Transistors - Bipolar (BJT) - Single
  • 2SA1382,T6MIBF(J Datasheet
  • TO-226-3, TO-92-3 Long Body
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 27005
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
2SA1382,T6MIBF(J
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PNP 2A 50V TO226-3
Package
Bulk
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Power - Max
900 mW
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 33mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA, 2V
Frequency - Transition
110MHz
Package_case
TO-226-3, TO-92-3 Long Body

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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