Sanyo 2SB1229T
- 2SB1229T
- Sanyo
- PNP EPITAXIAL PLANAR SILICON
- Transistors - Bipolar (BJT) - Single
- 2SB1229T Datasheet
- TO-226-3, TO-92-3 (TO-226AA)
- Bulk
- Lead free / RoHS Compliant
- 10884
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number 2SB1229T |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Sanyo |
Description PNP EPITAXIAL PLANAR SILICON |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package 3-NP |
Power - Max 750 mW |
Transistor Type PNP |
Current - Collector (Ic) (Max) 2 A |
Voltage - Collector Emitter Breakdown (Max) 50 V |
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 1A |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V |
Frequency - Transition 150MHz |
Package_case TO-226-3, TO-92-3 (TO-226AA) |
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