Toshiba Semiconductor and Storage 2SD2257(Q,M)
- 2SD2257(Q,M)
- Toshiba Semiconductor and Storage
- TRANS NPN 3A 100V TO220-3
- Transistors - Bipolar (BJT) - Single
- 2SD2257(Q,M) Datasheet
- TO-220-3 Full Pack
- Bulk
-
Lead free / RoHS Compliant
- 19597
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number 2SD2257(Q,M) |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS NPN 3A 100V TO220-3 |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack |
Supplier Device Package TO-220NIS |
Power - Max 2 W |
Transistor Type NPN |
Current - Collector (Ic) (Max) 3 A |
Voltage - Collector Emitter Breakdown (Max) 100 V |
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A |
Current - Collector Cutoff (Max) 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V |
Frequency - Transition - |
Package_case TO-220-3 Full Pack |
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