Toshiba Semiconductor and Storage 2SD2406-Y(F)
- 2SD2406-Y(F)
- Toshiba Semiconductor and Storage
- TRANS NPN 80V 4A TO220NIS
- Transistors - Bipolar (BJT) - Single
- 2SD2406-Y(F) Datasheet
- TO-220-3 Full Pack
- Tube
-
Lead free / RoHS Compliant
- 3588
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number 2SD2406-Y(F) |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS NPN 80V 4A TO220NIS |
Package Tube |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack |
Supplier Device Package TO-220NIS |
Power - Max 25 W |
Transistor Type NPN |
Current - Collector (Ic) (Max) 4 A |
Voltage - Collector Emitter Breakdown (Max) 80 V |
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A |
Current - Collector Cutoff (Max) 30µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V |
Frequency - Transition 8MHz |
Package_case TO-220-3 Full Pack |
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