2SD2406-Y(F)

Toshiba Semiconductor and Storage 2SD2406-Y(F)

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  • 2SD2406-Y(F)
  • Toshiba Semiconductor and Storage
  • TRANS NPN 80V 4A TO220NIS
  • Transistors - Bipolar (BJT) - Single
  • 2SD2406-Y(F) Datasheet
  • TO-220-3 Full Pack
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3588
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
2SD2406-Y(F)
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS NPN 80V 4A TO220NIS
Package
Tube
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Power - Max
25 W
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 300mA, 3A
Current - Collector Cutoff (Max)
30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA, 5V
Frequency - Transition
8MHz
Package_case
TO-220-3 Full Pack

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Toshiba Semiconductor and Storage
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