2SK1848-TB-E Product Introduction:
ON Semiconductor Part Number 2SK1848-TB-E(Transistors - FETs, MOSFETs - RF), developed and manufactured by ON Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
2SK1848-TB-E is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the onsemi 2SK1848-TB-E, a high-performance power MOSFET designed to meet the demanding requirements of various applications. This advanced device offers exceptional performance and reliability, making it an ideal choice for a wide range of electronic systems.
The 2SK1848-TB-E features a low on-resistance, enabling efficient power management and minimizing power losses. With a maximum drain current of 5.5A, this MOSFET can handle high current loads with ease. Its low gate charge and fast switching speed ensure quick and efficient operation, making it suitable for applications that require rapid switching.
This power MOSFET is designed to operate at a voltage range of -30V to +30V, providing flexibility in various circuit designs. Its compact and lightweight package allows for easy integration into space-constrained applications.
The onsemi 2SK1848-TB-E is suitable for a wide range of applications, including power supplies, motor control, LED lighting, and battery management systems. Its high performance and reliability make it an excellent choice for applications that require efficient power management and precise control.
In summary, the onsemi 2SK1848-TB-E is a high-performance power MOSFET that offers exceptional performance, reliability, and versatility. With its low on-resistance, high current handling capability, and fast switching speed, it is an ideal choice for a wide range of electronic systems.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
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