Toshiba Semiconductor and Storage 2SK3565(Q,M)
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- 2SK3565(Q,M)
- Toshiba Semiconductor and Storage
- MOSFET N-CH 900V 5A TO220SIS
- Transistors - FETs, MOSFETs - Single
- 2SK3565(Q,M) Datasheet
- TO-220-3 Full Pack
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 17065
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number 2SK3565(Q,M) |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 900V 5A TO220SIS |
| Package Tape & Reel (TR) |
| Series π-MOSIV |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 Full Pack |
| Supplier Device Package TO-220SIS |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 45W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 900 V |
| Current - Continuous Drain (Id) @ 25°C 5A (Ta) |
| Rds On (Max) @ Id, Vgs 2.5Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 Full Pack |
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