ON Semiconductor AFGY100T65SPD
- AFGY100T65SPD
- ON Semiconductor
- IGBT - 650 V 100 A FS3 FOR EV TR
- Transistors - IGBTs - Single
- AFGY100T65SPD Datasheet
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 4627
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number AFGY100T65SPD |
Category Transistors - IGBTs - Single |
Manufacturer ON Semiconductor |
Description IGBT - 650 V 100 A FS3 FOR EV TR |
Package Tube |
Series Automotive, AEC-Q101 |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247-3 |
Power - Max 660 W |
Input Type Standard |
Reverse Recovery Time (trr) 105 ns |
Current - Collector (Ic) (Max) 120 A |
Voltage - Collector Emitter Breakdown (Max) 650 V |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 100A |
Gate Charge 109 nC |
Td (on/off) @ 25°C 36ns/78ns |
Test Condition 400V, 100A, 5Ohm, 15V |
Current - Collector Pulsed (Icm) 300 A |
Switching Energy 5.1mJ (on), 2.7mJ (off) |
Package_case TO-247-3 |
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