AFT09H310-03SR6 Product Introduction:
NXP USA Inc. Part Number AFT09H310-03SR6(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
AFT09H310-03SR6 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the AFT09H310-03SR6 by NXP USA Inc., a cutting-edge RF power transistor designed to revolutionize the world of wireless communication. With its advanced features and exceptional performance, this product is set to redefine the standards of RF power amplification.
The AFT09H310-03SR6 boasts a high power output of 310W, making it ideal for applications that require a significant amount of power, such as cellular base stations, wireless infrastructure, and broadcast transmitters. Its exceptional efficiency ensures optimal power utilization, resulting in reduced energy consumption and improved overall system performance.
Equipped with a wide frequency range of 860MHz to 960MHz, this power transistor offers versatility and compatibility with various communication systems. Its high linearity and low distortion characteristics guarantee superior signal quality, enabling seamless and reliable communication.
Designed with reliability in mind, the AFT09H310-03SR6 features a rugged construction that can withstand harsh operating conditions. Its excellent thermal management capabilities ensure stable performance even in high-temperature environments, making it a reliable choice for demanding applications.
NXP USA Inc. has always been at the forefront of innovation, and the AFT09H310-03SR6 is a testament to our commitment to delivering cutting-edge solutions. With its exceptional features and wide range of applications, this RF power transistor is set to revolutionize the wireless communication industry. Experience the future of RF power amplification with the AFT09H310-03SR6 by NXP USA Inc.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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