AFT09H310-04GSR6 Product Introduction:
NXP USA Inc. Part Number AFT09H310-04GSR6(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
AFT09H310-04GSR6 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the AFT09H310-04GSR6, the latest innovation from NXP USA Inc. This high-performance RF power transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional power output and efficiency, the AFT09H310-04GSR6 is the perfect solution for a wide range of applications.
Featuring a compact and robust design, this power transistor delivers an impressive 9W of output power, making it ideal for use in cellular base stations, repeaters, and other wireless infrastructure equipment. Its high efficiency ensures minimal power loss, resulting in improved system performance and reduced energy consumption.
The AFT09H310-04GSR6 also boasts excellent linearity, enabling it to handle complex modulation schemes with ease. This makes it suitable for use in advanced communication systems, such as 4G and 5G networks, where signal integrity is crucial.
With its wide operating frequency range of 700MHz to 2700MHz, this power transistor offers versatility and flexibility, allowing it to be used in various frequency bands. Its rugged construction ensures reliable operation even in harsh environments, making it a reliable choice for outdoor applications.
In summary, the AFT09H310-04GSR6 from NXP USA Inc. is a high-performance RF power transistor that combines power, efficiency, and versatility. Whether you're designing wireless infrastructure equipment or advanced communication systems, this product is sure to meet your needs and exceed your expectations.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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