AFT09S282NR3 Product Introduction:
NXP USA Inc. Part Number AFT09S282NR3(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
AFT09S282NR3 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the AFT09S282NR3, the latest innovation from NXP USA Inc. This high-performance RF power transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional power output and efficiency, the AFT09S282NR3 is the perfect solution for a wide range of applications.
Featuring a compact and robust design, this transistor delivers an impressive output power of up to 28 Watts, making it ideal for use in high-power RF amplifiers. Its high gain and low distortion characteristics ensure excellent signal quality, enabling seamless communication in even the most challenging environments.
The AFT09S282NR3 also boasts exceptional efficiency, allowing for reduced power consumption and extended battery life in portable devices. Its advanced thermal management capabilities ensure reliable operation even under extreme conditions, making it suitable for use in industrial and automotive applications.
With its wide frequency range and excellent linearity, the AFT09S282NR3 is well-suited for a variety of applications, including cellular base stations, wireless infrastructure, and satellite communication systems. Its versatility and performance make it an ideal choice for engineers and designers looking to optimize their RF power amplification solutions.
In summary, the AFT09S282NR3 from NXP USA Inc. is a high-performance RF power transistor that offers exceptional power output, efficiency, and reliability. With its wide range of applications and advanced features, it is the perfect choice for demanding wireless communication systems.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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