AFT18H357-24NR6 Product Introduction:
NXP USA Inc. Part Number AFT18H357-24NR6(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
AFT18H357-24NR6 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the AFT18H357-24NR6 by NXP USA Inc., a cutting-edge RF power transistor designed to revolutionize the world of wireless communication. With its advanced features and exceptional performance, this product is set to redefine the industry standards.
The AFT18H357-24NR6 boasts a high power output of 18W, making it ideal for applications that require a strong and reliable signal transmission. Its wide frequency range of 3.5 to 3.7 GHz ensures compatibility with various wireless communication systems, including Wi-Fi, LTE, and 5G networks.
Equipped with NXP's innovative LDMOS technology, this power transistor offers excellent linearity and efficiency, resulting in enhanced signal quality and reduced power consumption. Its compact size and low thermal resistance make it suitable for space-constrained applications, without compromising on performance.
The AFT18H357-24NR6 finds its application in a wide range of fields, including telecommunications, aerospace, and defense. It can be used in base stations, repeaters, and transceivers to amplify signals and extend the coverage area. Additionally, its high power output makes it suitable for radar systems, satellite communication, and military applications.
In conclusion, the AFT18H357-24NR6 by NXP USA Inc. is a game-changer in the world of RF power transistors. With its exceptional features, wide frequency range, and versatile applications, it is set to empower the wireless communication industry and drive innovation forward.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
NSR05T40P2T5G: Analysis, Manufacturer, Datasheet
In today's digital age, network services have become an integral part of every industry. Whether it's for enterprise applications or personal daily use, we all rely on high-speed, stable network connections. In this field, NSR05T40P2T5G, as an advanced network service technology, is gradually becoming the cornerstone of next-generation network services.
1N4007 diode: key component in electronic circuits
The 1N4007 rectifier diode belongs to a series of high-power rectifier diodes made of silicon materials. Its main feature is that it can withstand high peak reverse voltage and average rectifier current. Specifically, the maximum peak reverse voltage (VRM) of 1N4007 is 1000V, the average rectifier current (IF(AV)) is 1A, and it operates in the temperature range of -65°C to +175°C. In addition, its forward voltage drop (VF) is about 1V at high current, with good thermal stability, and can work st
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Introduction to Semiconductor Discrete Devices
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