AFT26H200W03SR6 Product Introduction:
NXP USA Inc. Part Number AFT26H200W03SR6(Transistors - FETs, MOSFETs - RF), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
AFT26H200W03SR6 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the AFT26H200W03SR6 by NXP USA Inc., a cutting-edge RF power transistor designed to revolutionize the world of wireless communication. With its advanced features and exceptional performance, this transistor is set to redefine the standards of power amplification.
The AFT26H200W03SR6 boasts a high power output of 200W, making it ideal for applications that require a significant amount of power, such as cellular base stations, wireless infrastructure, and broadcast transmitters. Its wide frequency range of 700MHz to 2700MHz ensures compatibility with various communication systems, providing flexibility and versatility.
Equipped with NXP's state-of-the-art LDMOS technology, this transistor delivers exceptional linearity and efficiency, resulting in improved signal quality and reduced power consumption. Its high gain and low distortion characteristics make it an excellent choice for demanding applications that require high fidelity and reliability.
Furthermore, the AFT26H200W03SR6 features a compact and robust design, ensuring easy integration into existing systems and enhanced durability. Its excellent thermal management capabilities guarantee reliable operation even in challenging environments.
In summary, the AFT26H200W03SR6 by NXP USA Inc. is a game-changing RF power transistor that offers high power output, wide frequency range, exceptional linearity, and efficiency. With its versatile applications in cellular base stations, wireless infrastructure, and broadcast transmitters, this transistor is set to revolutionize the world of wireless communication.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
L7805CV Transistor: Pinout, Datasheet and Applications
What is the L7805CV Transistor? The ST model L7805CV is a voltage regulator in a three-end regulator TO-220 package that can be used in a wide range of applications. It ensures a steady 5V output from a higher input voltage. If sufficient heat dissipation is provided, the L1981301772 can provide an output current of more than 1A. Although these devices are primarily designed as fixed voltage regulators, they can be used with external components to obtain adjustable voltages and currents.
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