Microsemi Corporation APTC90H12T1G
- APTC90H12T1G
- Microsemi Corporation
- MOSFET 4N-CH 900V 30A SP1
- Transistors - FETs, MOSFETs - Arrays
- APTC90H12T1G Datasheet
- SP1
- Tube
- Lead free / RoHS Compliant
- 3323
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number APTC90H12T1G |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Microsemi Corporation |
Description MOSFET 4N-CH 900V 30A SP1 |
Package Tube |
Series CoolMOS™ |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case SP1 |
Supplier Device Package SP1 |
Power - Max 250W |
FET Type 4 N-Channel (H-Bridge) |
FET Feature Super Junction |
Drain to Source Voltage (Vdss) 900V |
Current - Continuous Drain (Id) @ 25°C 30A |
Rds On (Max) @ Id, Vgs 120mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V |
Package_case SP1 |
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