APTC90H12T1G

Microsemi Corporation APTC90H12T1G

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  • APTC90H12T1G
  • Microsemi Corporation
  • MOSFET 4N-CH 900V 30A SP1
  • Transistors - FETs, MOSFETs - Arrays
  • APTC90H12T1G Datasheet
  • SP1
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3323
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
APTC90H12T1G
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Microsemi Corporation
Description
MOSFET 4N-CH 900V 30A SP1
Package
Tube
Series
CoolMOS™
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP1
Supplier Device Package
SP1
Power - Max
250W
FET Type
4 N-Channel (H-Bridge)
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
900V
Current - Continuous Drain (Id) @ 25°C
30A
Rds On (Max) @ Id, Vgs
120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
6800pF @ 100V
Package_case
SP1

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Microsemi Corporation
Microsemi Corporation
Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; ...
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