APTGT30A170D1G

Microsemi Corporation APTGT30A170D1G

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  • APTGT30A170D1G
  • Microsemi Corporation
  • IGBT MODULE 1700V 45A 210W D1
  • Transistors - IGBTs - Modules
  • APTGT30A170D1G Datasheet
  • D1
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 15685
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
APTGT30A170D1G
Category
Transistors - IGBTs - Modules
Manufacturer
Microsemi Corporation
Description
IGBT MODULE 1700V 45A 210W D1
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
Chassis Mount
Package / Case
D1
Supplier Device Package
D1
Power - Max
210 W
Configuration
Half Bridge
Current - Collector (Ic) (Max)
45 A
Voltage - Collector Emitter Breakdown (Max)
1700 V
Current - Collector Cutoff (Max)
3 mA
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Input Capacitance (Cies) @ Vce
2.5 nF @ 25 V
Input
Standard
NTC Thermistor
No
Package_case
D1

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Microsemi Corporation
Microsemi Corporation
Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; ...
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