APTGT50DH120T3G

Microsemi Corporation APTGT50DH120T3G

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  • APTGT50DH120T3G
  • Microsemi Corporation
  • IGBT MODULE 1200V 75A 277W SP3
  • Transistors - IGBTs - Modules
  • APTGT50DH120T3G Datasheet
  • SP3
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1127
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
APTGT50DH120T3G
Category
Transistors - IGBTs - Modules
Manufacturer
Microsemi Corporation
Description
IGBT MODULE 1200V 75A 277W SP3
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Power - Max
277 W
Configuration
Asymmetrical Bridge
Current - Collector (Ic) (Max)
75 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
250 µA
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 50A
Input Capacitance (Cies) @ Vce
3.6 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Package_case
SP3

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Microsemi Corporation
Microsemi Corporation
Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; ...
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