APTGT75DA120T1G

Microsemi Corporation APTGT75DA120T1G

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  • APTGT75DA120T1G
  • Microsemi Corporation
  • IGBT MODULE 1200V 110A 357W SP1
  • Transistors - IGBTs - Modules
  • APTGT75DA120T1G Datasheet
  • SP1
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4290
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
APTGT75DA120T1G
Category
Transistors - IGBTs - Modules
Manufacturer
Microsemi Corporation
Description
IGBT MODULE 1200V 110A 357W SP1
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP1
Supplier Device Package
SP1
Power - Max
357 W
Configuration
Single
Current - Collector (Ic) (Max)
110 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
250 µA
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
Input Capacitance (Cies) @ Vce
5.34 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Package_case
SP1

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Microsemi Corporation
Microsemi Corporation
Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; ...
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