Microsemi Corporation APTM100H80FT1G
- APTM100H80FT1G
- Microsemi Corporation
- MOSFET 4N-CH 1000V 11A SP1
- Transistors - FETs, MOSFETs - Arrays
- APTM100H80FT1G Datasheet
- SP1
- Bulk
-
Lead free / RoHS Compliant
- 3735
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number APTM100H80FT1G |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Microsemi Corporation |
Description MOSFET 4N-CH 1000V 11A SP1 |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case SP1 |
Supplier Device Package SP1 |
Power - Max 208W |
FET Type 4 N-Channel (H-Bridge) |
FET Feature Standard |
Drain to Source Voltage (Vdss) 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C 11A |
Rds On (Max) @ Id, Vgs 960mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 3876pF @ 25V |
Package_case SP1 |
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