BF998RE6327HTSA1 Product Introduction:
Infineon Technologies Part Number BF998RE6327HTSA1(Transistors - FETs, MOSFETs - RF), developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
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Introducing the Infineon Technologies BF998RE6327HTSA1, a high-performance RF transistor designed to meet the demanding requirements of various applications. This transistor is part of Infineon's renowned RF portfolio, known for its exceptional quality and reliability.
The BF998RE6327HTSA1 boasts impressive features that make it an ideal choice for a wide range of applications. With a low noise figure of only 1.2 dB at 1 GHz, this transistor ensures excellent signal integrity and minimal distortion. Its high gain of 15 dB at 1 GHz allows for efficient amplification, making it suitable for use in high-frequency communication systems.
This transistor is also designed for ease of use, with a compact SOT143 package that enables simple integration into existing circuit designs. Its high power handling capability of up to 1.5 W ensures reliable performance even in demanding environments.
The BF998RE6327HTSA1 finds application in various fields, including wireless communication systems, satellite communication, radar systems, and test and measurement equipment. Its low noise figure and high gain make it particularly well-suited for use in low-noise amplifiers, front-end modules, and other RF signal processing applications.
With the Infineon Technologies BF998RE6327HTSA1, you can expect exceptional performance, reliability, and versatility. Whether you are designing wireless communication systems or radar applications, this transistor is sure to meet your needs and exceed your expectations.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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