BFR181E6327

Infineon Technologies BFR181E6327

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  • BFR181E6327
  • Infineon Technologies
  • LOW-NOISE TRANSISTOR
  • Transistors - Bipolar (BJT) - RF
  • BFR181E6327 Datasheet
  • TO-236-3, SC-59, SOT-23-3
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3245
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
BFR181E6327
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
Infineon Technologies
Description
LOW-NOISE TRANSISTOR
Package
Bulk
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23
Gain
18.5dB
Power - Max
175mW
Transistor Type
NPN
Current - Collector (Ic) (Max)
20mA
Voltage - Collector Emitter Breakdown (Max)
12V
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 5mA, 8V
Frequency - Transition
8GHz
Noise Figure (dB Typ @ f)
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Package_case
TO-236-3, SC-59, SOT-23-3

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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