Infineon Technologies BFR182E-6327
- BFR182E-6327
- Infineon Technologies
- RF N-CHANNEL MOSFET
- Transistors - Bipolar (BJT) - RF
- BFR182E-6327 Datasheet
- TO-236-3, SC-59, SOT-23-3
- Bulk
- Lead free / RoHS Compliant
- 25610
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number BFR182E-6327 |
Category Transistors - Bipolar (BJT) - RF |
Manufacturer Infineon Technologies |
Description RF N-CHANNEL MOSFET |
Package Bulk |
Series Automotive, AEC-Q101, BFR182 |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23 |
Gain 9.5dB |
Power - Max 250mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 35mA |
Voltage - Collector Emitter Breakdown (Max) 12V |
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 8V |
Frequency - Transition 8GHz |
Noise Figure (dB Typ @ f) 1.3dB @ 1.8GHz |
Package_case TO-236-3, SC-59, SOT-23-3 |
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