BFR182E6327HTSA1 Product Introduction:
Infineon Technologies Part Number BFR182E6327HTSA1(Transistors - Bipolar (BJT) - RF), developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BFR182E6327HTSA1 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Infineon Technologies BFR182E6327HTSA1, a cutting-edge RF transistor that is set to revolutionize the world of wireless communication. With its advanced features and exceptional performance, this transistor is designed to meet the demanding requirements of today's high-frequency applications.
The BFR182E6327HTSA1 boasts a high power gain of up to 20 dB, ensuring optimal signal amplification and transmission. Its low noise figure of only 1.5 dB guarantees crystal-clear reception and transmission, making it ideal for applications such as cellular base stations, satellite communication systems, and radar systems.
This transistor operates at a frequency range of 1.8 GHz to 2.2 GHz, making it suitable for a wide range of wireless communication protocols, including GSM, LTE, and Wi-Fi. Its high linearity ensures minimal distortion, enabling seamless data transmission and reception.
In addition to its exceptional performance, the BFR182E6327HTSA1 also offers excellent thermal stability, ensuring reliable operation even in harsh environments. Its compact SOT-343 package allows for easy integration into existing circuit designs, saving valuable board space.
Whether you are designing wireless communication systems, radar systems, or satellite communication systems, the Infineon Technologies BFR182E6327HTSA1 is the perfect choice for your high-frequency applications. Experience unparalleled performance and reliability with this state-of-the-art RF transistor.
Bipolar (BJT) -RF refers to radio frequency circuits designed using Bipolar Junction transistors (BJT) for processing high frequency signals. This type of BJT has been specially designed with low parasitic effects and high gain characteristics, allowing it to provide excellent performance in RF applications. Bipolar (BJT) -RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
Bipolar (BJT) -RF plays an important role in many fields such as modern communication, radar detection and satellite navigation. In the field of wireless communication, BJT is widely used in the RF front-end of mobile phones, base stations, radio stations and other equipment to realize signal transceiver and processing. With the development of new generation communication technologies such as 5G and 6G, the performance requirements for RF devices are getting higher and higher, and BJT has shown strong competitiveness in high frequency, broadband, low power consumption and other aspects with its unique advantages. In the field of radar detection, BJT is used to build high-performance RF transceiver system to improve the detection range and resolution of radar. At the same time, BJT also plays an important role in space applications such as satellite navigation and remote sensing, providing stable and reliable RF support for satellite communication systems.
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