BLC9H10XS-350AY Product Introduction:
Ampleon USA Inc. Part Number BLC9H10XS-350AY(Transistors - FETs, MOSFETs - RF), developed and manufactured by Ampleon USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BLC9H10XS-350AY is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the BLC9H10XS-350AY, the latest innovation from Ampleon USA Inc. This high-performance RF power transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional power handling capability and efficiency, the BLC9H10XS-350AY is set to revolutionize the industry.
Featuring a compact and robust design, this transistor delivers an impressive output power of 350W, making it ideal for applications such as cellular base stations, repeaters, and wireless infrastructure. Its high gain and low distortion characteristics ensure reliable and high-quality signal transmission, even in the most challenging environments.
The BLC9H10XS-350AY also boasts excellent thermal stability, thanks to its advanced thermal management system. This ensures optimal performance and reliability, even during prolonged operation. Additionally, its wide operating frequency range allows for versatile use across various frequency bands, providing flexibility for different communication systems.
Ampleon USA Inc. has always been committed to delivering cutting-edge solutions that meet the evolving needs of the wireless communication industry. The BLC9H10XS-350AY is a testament to this commitment, offering exceptional performance, reliability, and efficiency.
In conclusion, the BLC9H10XS-350AY is the ultimate choice for professionals seeking a high-power RF transistor for their wireless communication systems. With its advanced features and wide application fields, this product is set to redefine the standards of the industry. Trust Ampleon USA Inc. to provide you with the best-in-class solutions for your communication needs.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is an electronic device that controls current by forming a metal oxide layer as a dielectric on a semiconductor. The working principle of MOSFET is based on the control of semiconductor conductivity by electric field.
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BC547/BC548 transistor pin configuration, data sheet and application characteristics
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