BLD6G22LS-50,112 Product Introduction:
Ampleon USA Inc. Part Number BLD6G22LS-50,112(Transistors - FETs, MOSFETs - RF), developed and manufactured by Ampleon USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BLD6G22LS-50,112 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the BLD6G22LS-50,112 from Ampleon USA Inc., a cutting-edge RF power transistor designed to revolutionize the telecommunications industry. With its advanced features and exceptional performance, this product is set to redefine the standards of power amplification.
The BLD6G22LS-50,112 boasts a high power gain of 22 dB, making it ideal for applications requiring high output power. Its impressive frequency range of 1.8 GHz to 2.2 GHz ensures compatibility with a wide range of communication systems. Additionally, this transistor offers a maximum output power of 50 Watts, enabling it to handle demanding power requirements with ease.
This product is built with reliability in mind, featuring a rugged design that can withstand harsh operating conditions. Its excellent thermal stability ensures consistent performance even in high-temperature environments. Furthermore, the BLD6G22LS-50,112 is equipped with built-in protection features, such as over-voltage and over-temperature protection, ensuring the longevity of the device.
The BLD6G22LS-50,112 finds its application in various fields, including cellular base stations, wireless infrastructure, and satellite communication systems. Its high power output and wide frequency range make it an ideal choice for amplifying signals in these industries. Whether it's enhancing network coverage or improving signal quality, this transistor is the perfect solution for achieving optimal performance.
In conclusion, the BLD6G22LS-50,112 from Ampleon USA Inc. is a game-changer in the RF power transistor market. With its exceptional features, rugged design, and wide application fields, this product is set to empower the telecommunications industry like never before.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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