NXP USA Inc. BLF10H6600P112
- BLF10H6600P112
- NXP USA Inc.
- POWER LDMOS TRANSISTOR, SOT539 (
- Transistors - Bipolar (BJT) - Single
- BLF10H6600P112 Datasheet
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- Bulk
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Lead free / RoHS Compliant
- 28383
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number BLF10H6600P112 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer NXP USA Inc. |
Description POWER LDMOS TRANSISTOR, SOT539 ( |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Transistor Type - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Vce Saturation (Max) @ Ib, Ic - |
Current - Collector Cutoff (Max) - |
DC Current Gain (hFE) (Min) @ Ic, Vce - |
Frequency - Transition - |
Package_case - |
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