BLF10H6600P112

NXP USA Inc. BLF10H6600P112

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  • BLF10H6600P112
  • NXP USA Inc.
  • POWER LDMOS TRANSISTOR, SOT539 (
  • Transistors - Bipolar (BJT) - Single
  • BLF10H6600P112 Datasheet
  • -
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 28383
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
BLF10H6600P112
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
NXP USA Inc.
Description
POWER LDMOS TRANSISTOR, SOT539 (
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
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Power - Max
-
Transistor Type
-
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Frequency - Transition
-
Package_case
-

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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