BLF178XRS,112 Product Introduction:
Ampleon USA Inc. Part Number BLF178XRS,112(Transistors - FETs, MOSFETs - RF), developed and manufactured by Ampleon USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BLF178XRS,112 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the BLF178XRS,112 by Ampleon USA Inc., a cutting-edge RF power transistor designed to revolutionize the world of wireless communication. With its exceptional performance and advanced features, this product is set to redefine the industry standards.
The BLF178XRS,112 boasts a high power output of up to 1400 Watts, making it ideal for applications that require a significant amount of power, such as base stations, radar systems, and broadcast transmitters. Its excellent linearity ensures minimal distortion, resulting in clear and reliable signal transmission.
Equipped with a rugged design, this power transistor can withstand harsh operating conditions, ensuring long-term reliability and durability. Its high efficiency guarantees optimal power usage, reducing energy consumption and operating costs.
The BLF178XRS,112 also features a wide frequency range, allowing for versatile use across various communication systems. Its compact size and lightweight design make it easy to integrate into existing systems, saving valuable space and simplifying installation.
Ampleon USA Inc. has always been at the forefront of innovation, and the BLF178XRS,112 is no exception. With its exceptional performance, reliability, and versatility, this power transistor is set to revolutionize the wireless communication industry.
Whether you are in the telecommunications, aerospace, or broadcasting sector, the BLF178XRS,112 is the perfect solution for your high-power RF needs. Trust Ampleon USA Inc. to deliver cutting-edge technology that exceeds your expectations.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
L7805CV Transistor: Pinout, Datasheet and Applications
What is the L7805CV Transistor? The ST model L7805CV is a voltage regulator in a three-end regulator TO-220 package that can be used in a wide range of applications. It ensures a steady 5V output from a higher input voltage. If sufficient heat dissipation is provided, the L1981301772 can provide an output current of more than 1A. Although these devices are primarily designed as fixed voltage regulators, they can be used with external components to obtain adjustable voltages and currents.
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).