BLF6G10LS-135RN:11 Product Introduction:
Ampleon USA Inc. Part Number BLF6G10LS-135RN:11(Transistors - FETs, MOSFETs - RF), developed and manufactured by Ampleon USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BLF6G10LS-135RN:11 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the BLF6G10LS-135RN:11, a cutting-edge product by Ampleon USA Inc. This high-performance RF power transistor is designed to meet the demanding requirements of today's wireless communication systems. With its exceptional features and versatility, the BLF6G10LS-135RN:11 is set to revolutionize the industry.
Featuring a frequency range of 1.8 to 2.2 GHz, this power transistor offers a maximum output power of 10 Watts, making it ideal for a wide range of applications. Its high efficiency and low thermal resistance ensure optimal performance even in the most demanding conditions. The BLF6G10LS-135RN:11 also boasts excellent linearity, enabling seamless integration into complex communication systems.
This product is specifically designed for use in base station applications, including cellular infrastructure, wireless broadband, and small cell systems. Its compact size and robust construction make it suitable for both indoor and outdoor installations. The BLF6G10LS-135RN:11 is also highly reliable, ensuring uninterrupted operation and minimizing downtime.
Ampleon USA Inc. is committed to delivering innovative solutions that meet the evolving needs of the wireless communication industry. With the BLF6G10LS-135RN:11, we continue to push the boundaries of performance and reliability. Trust Ampleon USA Inc. to provide you with the highest quality RF power transistors for your base station applications.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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