BLF7G22LS-130,112 Product Introduction:
Ampleon USA Inc. Part Number BLF7G22LS-130,112(Transistors - FETs, MOSFETs - RF), developed and manufactured by Ampleon USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BLF7G22LS-130,112 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the BLF7G22LS-130,112 from Ampleon USA Inc., a cutting-edge RF power transistor designed to revolutionize the telecommunications industry. With its advanced features and exceptional performance, this product is set to redefine the standards of power amplification.
The BLF7G22LS-130,112 boasts a high power output of 130W, making it ideal for applications requiring high levels of RF power. Its excellent linearity and efficiency ensure optimal signal quality and reduced power consumption, resulting in improved overall system performance. This transistor operates in the frequency range of 700-2700 MHz, providing versatility for a wide range of applications.
Designed with reliability in mind, the BLF7G22LS-130,112 incorporates advanced thermal management techniques, ensuring stable operation even under demanding conditions. Its compact size and lightweight design make it easy to integrate into existing systems, saving valuable space and simplifying installation.
This product finds its application in various fields, including cellular base stations, wireless infrastructure, and broadcast transmitters. Whether it's enhancing the coverage and capacity of cellular networks or improving the performance of wireless communication systems, the BLF7G22LS-130,112 is the perfect choice for professionals seeking unparalleled power amplification solutions.
In conclusion, the BLF7G22LS-130,112 from Ampleon USA Inc. is a game-changer in the RF power transistor market. With its exceptional features, reliability, and wide range of applications, this product is set to empower the telecommunications industry and drive innovation forward.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
BA159 Diodes: Introduction, Equivalents and Pinouts
Standard Diode Rectifiers Fast Recovery =< 500ns, > 200mA (Io) 1.3V @ 40V -65°C~125°C 2 Terminal Tape and Box (TB) DO-204AL, DO-41, Axial Through Hole
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