BLF7G24L-100,118 Product Introduction:
Ampleon USA Inc. Part Number BLF7G24L-100,118(Transistors - FETs, MOSFETs - RF), developed and manufactured by Ampleon USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BLF7G24L-100,118 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the BLF7G24L-100,118 from Ampleon USA Inc., a cutting-edge RF power transistor designed to revolutionize the world of wireless communication. With its exceptional performance and advanced features, this product is set to redefine the standards of power amplification.
The BLF7G24L-100,118 boasts a high power output of 100 Watts, making it ideal for applications that require a significant amount of power, such as base stations, repeaters, and wireless infrastructure. Its excellent linearity ensures minimal distortion, resulting in superior signal quality and enhanced communication efficiency.
Equipped with a wide frequency range of 700 to 2700 MHz, this power transistor offers versatility and compatibility with various wireless communication systems, including 4G LTE, 5G, and Wi-Fi. Its high efficiency and low power consumption make it an energy-efficient solution, reducing operational costs and environmental impact.
Designed with reliability in mind, the BLF7G24L-100,118 features a robust construction and excellent thermal management, ensuring stable performance even in demanding operating conditions. Its compact size and easy integration make it a convenient choice for system designers, enabling seamless integration into existing infrastructure.
Ampleon USA Inc. is committed to delivering innovative and reliable RF power solutions, and the BLF7G24L-100,118 is a testament to that commitment. With its exceptional features and wide range of applications, this power transistor is set to empower the wireless communication industry and drive the next generation of connectivity.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
1N4007 diode: key component in electronic circuits
The 1N4007 rectifier diode belongs to a series of high-power rectifier diodes made of silicon materials. Its main feature is that it can withstand high peak reverse voltage and average rectifier current. Specifically, the maximum peak reverse voltage (VRM) of 1N4007 is 1000V, the average rectifier current (IF(AV)) is 1A, and it operates in the temperature range of -65°C to +175°C. In addition, its forward voltage drop (VF) is about 1V at high current, with good thermal stability, and can work st
What Are Transistors and How Do They Work?
What is the definition of transistors?
What is the structure of a transistor?
How does a transistor work?
Classifications of a transistor
What are the functions of transistors?
Amplification function principle
What are transistors used for?
Relevant data and statistics of transistors for reference
What is diode?
What are diodes and their characteristics in electronics?
Diodes are fundamental components in modern electronics, playing crucial roles in various applications. These tiny yet powerful devices control the flow of electrical current, ensuring the proper functioning of countless electronic circuits. Understanding diodes and their importance is essential for anyone involved in electronics, from hobbyists to professionals.
What is a bipolar transistor and what is its operating mode