BLS9G2735LS-50U Product Introduction:
Ampleon USA Inc. Part Number BLS9G2735LS-50U(Transistors - FETs, MOSFETs - RF), developed and manufactured by Ampleon USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BLS9G2735LS-50U is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the BLS9G2735LS-50U by Ampleon USA Inc., a cutting-edge RF power transistor designed to revolutionize the telecommunications industry. With its advanced features and exceptional performance, this product is set to redefine the standards of power amplification.
The BLS9G2735LS-50U boasts a high power output of 50 Watts, making it ideal for applications requiring high levels of RF power. Its excellent linearity and efficiency ensure optimal signal quality and reduced power consumption, resulting in enhanced system performance and cost savings.
This power transistor operates in the frequency range of 2.7 to 3.5 GHz, making it suitable for a wide range of applications, including cellular base stations, wireless infrastructure, and satellite communications. Its robust design and high reliability make it perfect for demanding environments, ensuring uninterrupted operation even in extreme conditions.
Equipped with advanced thermal management features, the BLS9G2735LS-50U effectively dissipates heat, preventing overheating and ensuring long-term reliability. Its compact size and ease of integration make it a versatile solution for various system designs.
Ampleon USA Inc. is committed to delivering innovative and high-quality RF power transistors, and the BLS9G2735LS-50U is a testament to our dedication. With its exceptional performance and wide range of applications, this product is set to revolutionize the telecommunications industry. Experience the future of power amplification with the BLS9G2735LS-50U by Ampleon USA Inc.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i