Infineon Technologies BSB015N04NX3 G
- BSB015N04NX3 G
- Infineon Technologies
- MOSFET N-CH 40V 180A 2WDSON
- Transistors - FETs, MOSFETs - Single
- BSB015N04NX3 G Datasheet
- 3-WDSON
- 3-WDSON
- Lead free / RoHS Compliant
- 885
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number BSB015N04NX3 G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 40V 180A 2WDSON |
Package 3-WDSON |
Series OptiMOS? |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 3-WDSON |
Supplier Device Package MG-WDSON-2, CanPAK M? |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 40V |
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 180A (Tc) |
Rds On (Max) @ Id, Vgs 1.5 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) 20V |
Package_case 3-WDSON |
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