Infineon Technologies BSB044N08NN3 G
- BSB044N08NN3 G
- Infineon Technologies
- MOSFET N-CH 80V 18A WDSON-2
- Transistors - FETs, MOSFETs - Single
- BSB044N08NN3 G Datasheet
- 3-WDSON
- 3-WDSON
-
Lead free / RoHS Compliant
- 4948
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number BSB044N08NN3 G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 80V 18A WDSON-2 |
Package 3-WDSON |
Series OptiMOS? |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 3-WDSON |
Supplier Device Package MG-WDSON-2, CanPAK M? |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.2W (Ta), 78W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 80V |
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 90A (Tc) |
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 97µA |
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 40V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) 20V |
Package_case 3-WDSON |
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