Infineon Technologies BSC010NE2LSI
- BSC010NE2LSI
- Infineon Technologies
- MOSFET N-CH 25V 38A TDSON-8
- Transistors - FETs, MOSFETs - Single
- BSC010NE2LSI Datasheet
- 8-PowerTDFN
- 8-PowerTDFN
- Lead free / RoHS Compliant
- 23603
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number BSC010NE2LSI |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 25V 38A TDSON-8 |
Package 8-PowerTDFN |
Series OptiMOS? |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package PG-TDSON-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 96W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 25V |
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 100A (Tc) |
Rds On (Max) @ Id, Vgs 1.05 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 12V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Vgs (Max) 20V |
Package_case 8-PowerTDFN |
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