Infineon Technologies BSC0902NSIATMA1
- BSC0902NSIATMA1
- Infineon Technologies
- MOSFET N-CH 30V 23A/100A TDSON
- Transistors - FETs, MOSFETs - Single
- BSC0902NSIATMA1 Datasheet
- 8-PowerTDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 983
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number BSC0902NSIATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 30V 23A/100A TDSON |
Package Cut Tape (CT) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package PG-TDSON-8-6 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 48W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 100A (Tc) |
Rds On (Max) @ Id, Vgs 2.8mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id 2V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerTDFN |
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