Infineon Technologies BSC096N10LS5ATMA1
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- BSC096N10LS5ATMA1
- Infineon Technologies
- MOSFET N-CH 100V 40A TDSON-8-6
- Transistors - FETs, MOSFETs - Single
- BSC096N10LS5ATMA1 Datasheet
- 8-PowerTDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 4213
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number BSC096N10LS5ATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 100V 40A TDSON-8-6 |
| Package Cut Tape (CT) |
| Series OptiMOS™ 5 |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN |
| Supplier Device Package PG-TDSON-8-6 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3W (Ta), 83W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 40A (Tc) |
| Rds On (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 2.3V @ 36µA |
| Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-PowerTDFN |
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