BSC12DN20NS3GATMA1

Infineon Technologies BSC12DN20NS3GATMA1

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  • BSC12DN20NS3GATMA1
  • Infineon Technologies
  • MOSFET N-CH 200V 11.3A 8TDSON
  • Transistors - FETs, MOSFETs - Single
  • BSC12DN20NS3GATMA1 Datasheet
  • 8-PowerTDFN
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 7655
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
BSC12DN20NS3GATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 200V 11.3A 8TDSON
Package
Bulk
Series
OptiMOS™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8-5
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
50W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
11.3A (Tc)
Rds On (Max) @ Id, Vgs
125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 100 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
8-PowerTDFN

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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