Infineon Technologies BSC22DN20NS3GATMA1
- BSC22DN20NS3GATMA1
- Infineon Technologies
- MOSFET N-CH 200V 7A TDSON-8-5
- Transistors - FETs, MOSFETs - Single
- BSC22DN20NS3GATMA1 Datasheet
- 8-PowerTDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 3501
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number BSC22DN20NS3GATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 200V 7A TDSON-8-5 |
Package Cut Tape (CT) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package PG-TDSON-8-5 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 34W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 7A (Tc) |
Rds On (Max) @ Id, Vgs 225mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id 4V @ 13µA |
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 100 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case 8-PowerTDFN |
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Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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