Infineon Technologies BSC320N20NS3 G
- BSC320N20NS3 G
- Infineon Technologies
- MOSFET N-CH 200V 36A TDSON-8
- Transistors - FETs, MOSFETs - Single
- BSC320N20NS3 G Datasheet
- 8-PowerTDFN
- 8-PowerTDFN
-
Lead free / RoHS Compliant
- 18956
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number BSC320N20NS3 G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 200V 36A TDSON-8 |
Package 8-PowerTDFN |
Series OptiMOS? |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package PG-TDSON-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 125W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 200V |
Current - Continuous Drain (Id) @ 25°C 36A (Tc) |
Rds On (Max) @ Id, Vgs 32 mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id 4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) 20V |
Package_case 8-PowerTDFN |
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