Infineon Technologies BSC750N10NDGATMA1
- BSC750N10NDGATMA1
- Infineon Technologies
- MOSFET 2N-CH 100V 3.2A 8TDSON
- Transistors - FETs, MOSFETs - Arrays
- BSC750N10NDGATMA1 Datasheet
- 8-PowerVDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 1418
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number BSC750N10NDGATMA1 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Infineon Technologies |
Description MOSFET 2N-CH 100V 3.2A 8TDSON |
Package Cut Tape (CT) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package PG-TDSON-8-4 |
Power - Max 26W |
FET Type 2 N-Channel (Dual) |
FET Feature Standard |
Drain to Source Voltage (Vdss) 100V |
Current - Continuous Drain (Id) @ 25°C 3.2A |
Rds On (Max) @ Id, Vgs 75mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id 4V @ 12µA |
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 50V |
Package_case 8-PowerVDFN |
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