BSP149 E6327

Infineon Technologies BSP149 E6327

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  • BSP149 E6327
  • Infineon Technologies
  • MOSFET N-CH 200V 660MA SOT223-4
  • Transistors - FETs, MOSFETs - Single
  • BSP149 E6327 Datasheet
  • TO-261-4, TO-261AA
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2762
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
BSP149 E6327
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 200V 660MA SOT223-4
Package
Bulk
Series
SIPMOS®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.8W (Ta)
FET Type
N-Channel
FET Feature
Depletion Mode
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
660mA (Ta)
Rds On (Max) @ Id, Vgs
1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id
1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Package_case
TO-261-4, TO-261AA

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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