Infineon Technologies BSP318SH6327XTSA1
- BSP318SH6327XTSA1
- Infineon Technologies
- MOSFET N-CH 60V 2.6A SOT223-4
- Transistors - FETs, MOSFETs - Single
- BSP318SH6327XTSA1 Datasheet
- TO-261-4, TO-261AA
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 1081
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number BSP318SH6327XTSA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 60V 2.6A SOT223-4 |
Package Cut Tape (CT) |
Series SIPMOS® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-261-4, TO-261AA |
Supplier Device Package PG-SOT223-4 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.8W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 2.6A (Tj) |
Rds On (Max) @ Id, Vgs 90mOhm @ 2.6A, 10V |
Vgs(th) (Max) @ Id 2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-261-4, TO-261AA |
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