Infineon Technologies BSZ105N04NSGATMA1
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- BSZ105N04NSGATMA1
- Infineon Technologies
- MOSFET N-CH 40V 11A/40A 8TSDSON
- Transistors - FETs, MOSFETs - Single
- BSZ105N04NSGATMA1 Datasheet
- 8-PowerTDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 8265
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number BSZ105N04NSGATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 40V 11A/40A 8TSDSON |
| Package Cut Tape (CT) |
| Series OptiMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN |
| Supplier Device Package PG-TSDSON-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.1W (Ta), 35W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 11A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs 10.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 4V @ 14µA |
| Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 20 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 8-PowerTDFN |
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