BUK751R6-30E,127 Product Introduction:
NXP USA Inc. Part Number BUK751R6-30E,127(Transistors - FETs, MOSFETs - Single), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
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Introducing the BUK751R6-30E,127 from NXP USA Inc., a cutting-edge power MOSFET designed to deliver exceptional performance and reliability. This advanced device is specifically engineered to meet the demanding requirements of various applications, making it an ideal choice for a wide range of industries.
The BUK751R6-30E,127 boasts a low on-resistance of just 30mΩ, ensuring efficient power management and minimal power losses. With a maximum drain current of 75A, this power MOSFET can handle high power loads with ease. Its low gate charge and fast switching characteristics enable quick and efficient operation, making it suitable for applications that require high-speed switching.
This power MOSFET is designed to operate at a voltage range of 60V, making it suitable for a variety of applications. It is particularly well-suited for use in automotive systems, industrial automation, motor control, and power supplies. Its robust construction and high-temperature performance make it reliable even in harsh operating conditions.
The BUK751R6-30E,127 is housed in a compact and industry-standard TO-220 package, allowing for easy integration into existing designs. Its excellent thermal performance ensures efficient heat dissipation, enabling prolonged operation without the risk of overheating.
With its exceptional performance, reliability, and versatility, the BUK751R6-30E,127 from NXP USA Inc. is the perfect choice for engineers and designers looking to optimize power management in their applications. Experience the power of innovation with the BUK751R6-30E,127.
FET (field effect transistor) is an electronic device that controls the flow of current in a semiconductor based on the electric field effect. It is mainly composed of three ends: Gate, Source and Drain, and the current between source and drain is modulated by changing the grid voltage.MOSFET (metal oxide semiconductor field effect transistor) is a special type of FET, which plays an important role in electronic design because of its high input impedance, low noise and low power consumption. Mosfet-single also refers to a single MOSFET element or a simple circuit unit with it as the core, which further improves performance stability and application range on the basis of retaining the basic characteristics of FET.
Application
FET and MOSFET-single (FETs, MOSFETs-Single) application field is extremely wide, almost covers the core part of all electronic devices. In the field of consumer electronics, from smartphones, tablets to wearable devices, FETs and MOSFETs are key components for signal processing and power management, ensuring the normal operation of devices and efficient energy consumption. In industrial control systems, they are widely used in the fields of motor drive, automated production lines and process control, improving production efficiency and system stability. In addition, in automotive electronics, medical equipment, aerospace and other high-tech fields, FET and MOSFET also play an irreplaceable role. In automotive electronics, for example, they are used in engine management systems, safety systems, and entertainment systems. In medical equipment, it is used for key links such as signal amplification and power control of precision instruments.
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