BUK929R1-60EJ Product Introduction:
Nexperia USA Inc. Part Number BUK929R1-60EJ(Transistors - FETs, MOSFETs - Single), developed and manufactured by Nexperia USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
BUK929R1-60EJ is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the BUK929R1-60EJ, the latest innovation from Nexperia USA Inc. This power MOSFET module is designed to deliver exceptional performance and reliability in a wide range of applications. With its advanced features and robust construction, the BUK929R1-60EJ is set to revolutionize the power electronics industry.
One of the standout features of the BUK929R1-60EJ is its low on-resistance, which ensures minimal power loss and high efficiency. This makes it ideal for applications that require high power handling, such as motor control, power supplies, and automotive systems. Additionally, the module's low gate charge and fast switching speed enable precise control and rapid response times.
The BUK929R1-60EJ also boasts excellent thermal performance, thanks to its low thermal resistance and compact design. This allows for efficient heat dissipation, ensuring the module operates reliably even in demanding environments.
Furthermore, the BUK929R1-60EJ is equipped with advanced protection features, including over-temperature and over-current protection. This ensures the safety and longevity of the module, making it a reliable choice for critical applications.
With its exceptional performance, reliability, and advanced features, the BUK929R1-60EJ is suitable for a wide range of application fields, including industrial automation, renewable energy systems, consumer electronics, and more. Whether you need to control high-power motors or design efficient power supplies, the BUK929R1-60EJ is the perfect solution for your power electronics needs. Trust Nexperia USA Inc. to deliver cutting-edge technology that exceeds your expectations.
FET (field effect transistor) is an electronic device that controls the flow of current in a semiconductor based on the electric field effect. It is mainly composed of three ends: Gate, Source and Drain, and the current between source and drain is modulated by changing the grid voltage.MOSFET (metal oxide semiconductor field effect transistor) is a special type of FET, which plays an important role in electronic design because of its high input impedance, low noise and low power consumption. Mosfet-single also refers to a single MOSFET element or a simple circuit unit with it as the core, which further improves performance stability and application range on the basis of retaining the basic characteristics of FET.
Application
FET and MOSFET-single (FETs, MOSFETs-Single) application field is extremely wide, almost covers the core part of all electronic devices. In the field of consumer electronics, from smartphones, tablets to wearable devices, FETs and MOSFETs are key components for signal processing and power management, ensuring the normal operation of devices and efficient energy consumption. In industrial control systems, they are widely used in the fields of motor drive, automated production lines and process control, improving production efficiency and system stability. In addition, in automotive electronics, medical equipment, aerospace and other high-tech fields, FET and MOSFET also play an irreplaceable role. In automotive electronics, for example, they are used in engine management systems, safety systems, and entertainment systems. In medical equipment, it is used for key links such as signal amplification and power control of precision instruments.
L7805CV Transistor: Pinout, Datasheet and Applications
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The 1N4007 rectifier diode belongs to a series of high-power rectifier diodes made of silicon materials. Its main feature is that it can withstand high peak reverse voltage and average rectifier current. Specifically, the maximum peak reverse voltage (VRM) of 1N4007 is 1000V, the average rectifier current (IF(AV)) is 1A, and it operates in the temperature range of -65°C to +175°C. In addition, its forward voltage drop (VF) is about 1V at high current, with good thermal stability, and can work st
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