BUK961R4-30E,118

NXP USA Inc. BUK961R4-30E,118

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  • BUK961R4-30E,118
  • NXP USA Inc.
  • MOSFET N-CH 30V 120A D2PAK
  • Transistors - FETs, MOSFETs - Single
  • BUK961R4-30E,118 Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 19386
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
BUK961R4-30E,118
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 30V 120A D2PAK
Package
Cut Tape (CT)
Series
TrenchMOS™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
357W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
1.4mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
113 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
16150 pF @ 25 V
Vgs (Max)
±10V
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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