NXP USA Inc. BUK961R4-30E,118
- BUK961R4-30E,118
- NXP USA Inc.
- MOSFET N-CH 30V 120A D2PAK
- Transistors - FETs, MOSFETs - Single
- BUK961R4-30E,118 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 19386
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number BUK961R4-30E,118 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer NXP USA Inc. |
Description MOSFET N-CH 30V 120A D2PAK |
Package Cut Tape (CT) |
Series TrenchMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D2PAK |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 357W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 120A (Tc) |
Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 16150 pF @ 25 V |
Vgs (Max) ±10V |
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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