C3M0015065D

Cree/Wolfspeed C3M0015065D

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  • C3M0015065D
  • Cree/Wolfspeed
  • SICFET N-CH 650V 120A TO247-3
  • Transistors - FETs, MOSFETs - Single
  • C3M0015065D Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 25715
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
C3M0015065D
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Cree/Wolfspeed
Description
SICFET N-CH 650V 120A TO247-3
Package
Tube
Series
C3M™
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
416W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
21mOhm @ 55.8A, 15V
Vgs(th) (Max) @ Id
3.6V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs
188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
5011 pF @ 400 V
Vgs (Max)
+15V, -4V
Drive Voltage (Max Rds On, Min Rds On)
15V
Package_case
TO-247-3

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